Jump to main content
US EPA
United States Environmental Protection Agency
Search
Search
Main menu
Environmental Topics
Laws & Regulations
About EPA
Health & Environmental Research Online (HERO)
Contact Us
Print
Feedback
Export to File
Search:
This record has one attached file:
Add More Files
Attach File(s):
Display Name for File*:
Save
Citation
Tags
HERO ID
7173570
Reference Type
Journal Article
Title
CHARACTERIZATION OF PIEZO ELECTRIC WAFER ACTIVE SENSORS AFTER EXPOSURE TO HIGH TEMPERATURE
Author(s)
Haider, MF; Lin, Bin; Yu, L; Giurgiutiu, V; ,
Year
2017
Publisher
AMER SOC MECHANICAL ENGINEERS
Location
NEW YORK
Web of Science Id
WOS:000395838400016
Abstract
Piezoelectric wafer active sensors (PWAS) at high temperature with reliable operation are desired for structural health monitoring. The PWAS may be generalized as an electromechanical system because of the incorporation of electromechanical coupling. The basic principle of SHM method by PWAS is to monitor variation in the electro-mechanical (E/M) impedance/ admittance signature. The operational temperature range of PWAS can be limited by the sensing capability of the piezoelectric material at elevated temperatures. Therefore stability of PWAS at high-temperature environments is of great interest for SEEM. In such cases SHM can be done at room temperature or at relatively lower temperature. However, during service permanently bonded PWAS can be exposed to very high temperature. The traditional PWAS use piezoelectric materials Lead Zirconate Titanate (PZT) that have been attracted by researchers due to its enhanced sensing, actuation or both capabilities. This paper discusses properties relevant to sensor applications, including piezoelectric materials that are commercially available. For temperature dependence study PWAS were exposed to 50 degrees C to 250 degrees C with 50 degrees C interval at around 2 degrees C/min heating rate. E/M impedance/ admittance and different material properties such as, dielectric constant, dielectric loss, mechanical quality factor, P-E hysteresis loop, in plane piezoelectric constant were determined experimentally at room temperature after exposure to high temperature. The variation in E/M impedance and admittance signature and different material properties were obtained at each temperature. The piezoelectric material degradation was also investigated by microstructural and crystallographic study.
Editor(s)
Ren, W; Zhu, XK; Duncan, A;
ISBN
978-0-7918-5042-8
Conference Name
ASME Pressure Vessels and Piping Conference
Conference Location
Vancouver, CANADA
Home
Learn about HERO
Using HERO
Search HERO
Projects in HERO
Risk Assessment
Transparency & Integrity