US EPA

7212337 

Journal Article 

New Compact, High Performance 7th Generation IGBT Module with Direct Liquid Cooling for EV/HEV Inverters 

Hussein, K; Ishihara, M; Miyamoto, N; Nakata, Y; Nakano, T; Donlon, J; Motto, E; , 

2015 

IEEE 

NEW YORK 

1343-1346 

WOS:000370076901071 

This paper presents a new compact, direct liquid-cooled IGBT power module series (J1-Series) addressing major requirements for Electric and Hybrid Electric (EV/HEV) power-train inverter applications in terms of high power-density, lightweight, and high-reliability. The J1-Series is fitted with the latest state-of-the-art IGBT chips (7th Generation Carrier Stored Trench Bipolar Transistor (CSTBT)) with optimized Vce(sat)-vs-Eoff trade-off characteristic achieving high-efficiency and enabling compact designs with high power handling capability. The new IGBT module comes in a 6-in-1 circuit configuration compact package featuring the well proven wire-bond-less Direct Lead Bonding (DLB) approach for high-reliability and extended power cycling lifetime. The package also integrates a direct liquid-cooled Aluminum pin-fin for light-weight and durable performance. Compared to conventional EV/HEV modules, the new J1-Series package with 7th Generation IGBT chips achieves more than 10% power-loss reduction, 43% internal inductance reduction, 30% improved thermal performance, 40% foot-print reduction, and 76% weight reduction. 

30th Annual IEEE Applied Power Electronics Conference and Exposition (APEC) 

Charlotte, NC