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7555607 
Journal Article 
Valency-Based Descriptors for Silicon Carbides, Bismuth(III) Iodide, and Dendrimers in Drug Applications 
Li, QZ; Virk, AUR; Nazar, K; Ahmed, I; Tlili, I 
2020 
Yes 
Journal of Chemistry
ISSN: 2090-9063
EISSN: 2090-9071 
HINDAWI LTD 
LONDON 
2020 
1-17 
WOS:000540524300001 
Silicon carbide (SiC), also called carborundum, is a semiconductor containing silicon and carbon. Dendrimers are repetitively branched molecules that are typically symmetric around the core and often adopt a spherical three-dimensional morphology. Bismuth(III) iodide is an inorganic compound with the formula BiI3. This gray-black solid is the product of the reaction between bismuth and iodine, which once was of interest in qualitative inorganic analysis. In chemical graph theory, we associate a graph to a compound and compute topological indices that help us in guessing properties of the understudy compound. A topological index is the graph invariant number, calculated from a graph representing a molecule. Most of the proposed topological indices are related either to a vertex adjacency relationship (atom-atom connectivity) in the graph or to topological distances in the graph. In this paper, we aim to compute the first and second Gourava indices and hyper-Gourava indices for silicon carbides, bismuth(III) iodide, and dendrimers.