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7626398 
Journal Article 
Charge transport mechanism in PEPC complex 
Moiz, SA; Ahmed, MM; Karimov, KS; , 
2005 
IEEE 
NEW YORK 
IEEE 2005 International Conference on Emerging Technologies, ICET 2005 
2005 
318-322 
English 
WOS:000234650800058 
In this study current-voltage (I-V) characteristics of thin films of poly-N-epoxipropylcarbazole (PEPC) doped with Anthracene (An) have been investigated. The PEPC films were grown on Nickel (Ni) substrates, at room temperature, by using a centrifugal machine operated at 277 g. I-V characteristics were then evaluated as a function of temperature ranging from 30 to 60 degrees C. Reversible rectifying characteristics were exhibited by the devices in which the magnitude of current increases with increasing values of temperature. This has been explained with temperature dependent hopping process of free carriers in the organic films having positional as well as energetic disorders. Whereas it has been shown that the non linear I-V characteristics of the fabricated devices follow Space Charge Limited Current (SCLC) model. By applying the correlated Gaussian disorder mobility model to the experimental SCLC, the energetic disorder parameter and average intersite spacing between hopping locations have been calculated. It has been demonstrated that the magnitude of energetic disorderness and average intersite distance in PEPC complex is relatively higher which could be a cause of low hole mobility. 
Gaussian disorder model; Hole mobility; Organic semiconductors; Temperature dependent characteristics 
0-7803-9247-7 
International Conference on Emerging Technologies 
Islamabad, PAKISTAN