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7641840 
Journal Article 
p-i-n Homojunction in organic light-emitting transistors 
Bisri, SZ; Takenobu, T; Sawabe, K; Tsuda, S; Yomogida, Y; Yamao, T; Hotta, S; Adachi, C; Iwasa, Y 
2011 
Yes 
Advanced Materials
ISSN: 0935-9648
EISSN: 1521-4095 
WILEY-V C H VERLAG GMBH 
WEINHEIM 
23 
24 
2753-2758 
English 
21608046 
WOS:000293046600010 
A new method for investigating light-emitting property in organic devices is demonstrated. We apply the ambipolar light-emitting transistors (LETS) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously indicates that the light emission comes from the electric-field-induced p-i-n homojunction in ambipolar LETs. 
Doping; Electronic Mechanism; Organic Electronics; Organic Field-Effect Transistors; Transistor