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7747113 
Journal Article 
Synthesis of samarium telluride thin films by successive ionic layer adsorption and reaction (SILAR) method for supercapacitor application 
Kumbhar, VS; Lokhande, AC; Gaikwad, NS; Lokhande, CD 
2016 
1 
Materials Science in Semiconductor Processing
ISSN: 1369-8001 
Elsevier Ltd 
OXFORD 
46 
29-34 
English 
WOS:000371916800006 
The present paper deals with synthesis of samarium telluride (Sm2Te3) thin films using simple and low cost successive ionic layer adsorption and reaction (SILAR) method for supercapacitor application. The Sm2Te3 thin films are characterized by X-ray diffraction (XRD) for structural determination, energy dispersive analysis of X-ray (EDAX) for elemental composition, field emission scanning electron microscopy (FE-SEM) for surface morphological study and contact angle measurement for wettability study. The Sm2Te3 exhibits orthorhombic crystal structure with cloud like surface morphology. The film surface showed lyophilic behavior with contact angle of 5.7° for propylene carbonate (PC). Further, electrochemical measurements are carried out in LiClO4-PC electrolyte using cyclic voltammetry (CV), galvanostatic charge discharge and electrochemical impedance spectroscopy (EIS) techniques. The Sm2Te3 film showed maximum specific capacitance and energy density of 144 F g-1 and 10 W h kg-1 respectively. The EIS study showed negligible change in resistive parameters after 1000 electrochemical cycles. © 2016 Published by Elsevier Ltd. 
Samarium telluride; X-ray diffraction; Cyclic voltammetry; Specific capacitance; Electrochemical impedance spectroscopy