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8177016 
Journal Article 
Effect of polysilicon gate on the flatband voltage shift and mobility degradation for ALD-Al2O3 gate dielectric 
Lee, JH; Koh, K; Lee, NI; Cho, MH; Kim, YK; Jeon, JS; Cho, KH; Shin, HS; Kim, MH; Fujihara, K; Kang, HK; Moon, JT; IEEE; IEEE 
2000 
IEEE 
NEW YORK 
645-648 
WOS:000166855900148 
Al2O3 (EOT=22.7 Angstrom) gate dielectric layer formed by Atomic Layer Deposition (ALD) process have been characterized for sub-100nm CMOS devices. The gate leakage current was 3 orders of magnitude lower than that of SiO2 and the hysteresis of C-V curve was not observed. However, the negative fixed charge induced the flat band voltage (Vfb) shift and degraded the channel mobility of MOS transistor. The Vfb shift was reduced and channel mobility was improved by applying Pc gate by BF2 implantation. It is suggested that the phosphorous diffused from gate polysilicon has a role of network modifier in Al2O3 film and formation of the Al-O- dangling bond which may be ascribed to negative fixed charge. 
0-7803-6439-2 
IEEE International Electron Devices Meeting (IEDM) 
SAN FRANCISCO, CA