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8178489 
Journal Article 
Analytical band simulation of electric transport in ZnS thin film electroluminescent devices 
Zhao, H; He, DW; Wang, YS; Xu, XR 
2000 
1 
Wuli Xuebao
ISSN: 1000-3290 
CHINESE PHYSICAL SOC 
BEIJING 
49 
9 
1867-1872 
WOS:000089304200035 
The band structure of ZnS calculated from empirical pseudopotential method is fitted by use of polynomials. The density of state and scattering rates are also calculated from these polynomials. Based on these results, electric transport process in ZnS-type thin film electroluminescent devices is simulated through Monte Carlo method. By comparison with other methods, the calculation based on this model is as fast as nonparabolic model and as accurate as full band model. Furthermore, the influence of band model on simulation result is also investigated. We show that the dispersion relations and density of state are all important in simulation. 
electroluminescence; electric transport; Monte Carlo simulation