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8477546 
Journal Article 
Luminescence of native defects in Zn2GeO4 
Liu, Z; Jing, X; Wang, L; , 
2007 
1 
Journal of Electrochemical Society
ISSN: 0013-4651
EISSN: 1945-7111 
ELECTROCHEMICAL SOC INC 
PENNINGTON 
H500-H506 
WOS:000246179800071 
Pure phase Zn2GeO4 was fabricated by solid state reactions and the products were annealed in various atmospheres, such as O-2, air, N-2, vacuum, Zn, and Ge. The material was a native defect phosphor presenting white-bluish emission and its photoluminescence was about 40% brighter than that of the commercial ZnO phosphor. The electron paramagnetic resonance (EPR) measurements showed the existence of Zn-i(center dot) (or Zn+), an abnormal valence for Zn. Additionally, V-O(center dot), V-Zn('), and ionized V-Ge were also detected by EPR. The model for the luminescent emission of this native defect phosphor was proposed, which may arise from the recombination between the donors (V-O(center dot) and Zn-i(center dot)) and the acceptors (V-Zn(') and ionized V-Ge). (c) 2007 The Electrochemical Study.