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8545388 
Journal Article 
RF Performance Investigation of beta-Ga2O3/Graphene and beta-Ga2O3/Black Phosphorus Heterostructure MOSFETs 
Yadava, N; Chauhan, RK; , 
2019 
ECS Journal of Solid State Science and Technology
ISSN: 2162-8769
EISSN: 2162-8777 
ELECTROCHEMICAL SOC INC 
PENNINGTON 
8 
7 
Q3058-Q3063 
English 
WOS:000459542200001 
The structure for beta-Ga2O3/Graphene and beta-Ga2O3/BP heterostructure MOSFET has been proposed and investigated for the first time in this work. The RF performance of proposed structure was analyzed and compared with the experimental results of the conventional beta-Ga2O3 MOSFET. The key RF figure of merits (FOMs) such as transconductance (g(m)), cutoff frequency (f(T)), output power (P-OUT), power Gain (G(P)) and power added efficiency (PAE) is obtained for the above proposed structure. The large signal RF performance analysis of earlier proposed structure has also been carried out in this work by using CWClass-A power measurement at the frequency of 0.8 GHz using passive load and source tuning. This work elucidate the use of beta-Ga2O3/Graphene and beta-Ga2O3/BP heterostructure MOSFETs, for efficient monolithic and heterogeneous integration of RF circuits. (C) The Author(s) 2019. Published by ECS.