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8585358 
Meetings & Symposia 
Red organic light-emitting diodes using 9, 10-di(2-naphthyl)- Nthracene (ADN) as the host material 
Tang, H; Li, Y; Wang, X; Wang, W; Sun, R 
2007 
Shanghai 
Asia Display 2007, AD'07 
2 
1376-1380 
English 
We present red organic light-emitting diodes (OLEDs) with high efficiency and stability based on a wide band gap host material 9, 10-di (2-naphthyl) anthracene (ADN). In these diolds, N, N′-bis(1-naphthyl)-N, N′-diphenyl-l, l′-bi-phenyl-4, 4′ diamine (NPB) and tris-(8-ydroxy-quinoline) aluminum (Alq) are used as hole and electron transport layers, respectively. Coumarin6 (C6) and 4-(dicyano-methylene)-2-t-butyl-6-(1, 1, 7, 7-tetramethyl-julolidyl-9-enyl) - 4H-pyran (DCJTB) are co-doped into the ADN emitting layer. Utilizing the two-step energy transfer from ADN to C6 and then from C6 to DCJTB, we achieved pure red organic light-emitting devices, which showed improved optical and electrical characteristics. Compared with devices where the emitting layer is made of Alq and DCJTB, the emission efficiency and stability of the ADN-based devices are greatly improved and the turn-on voltage is also decreased. The co-doping technique provides a promising way to utilize wide band gap materials as the host to make red OLEDs, which will be useful in improving the EL performance of devices and simplifying the process of fabricating full-color OLEDs. 
ADN; Co-doped; OLED; Red OLED