Jump to main content
US EPA
United States Environmental Protection Agency
Search
Search
Main menu
Environmental Topics
Laws & Regulations
About EPA
Health & Environmental Research Online (HERO)
Contact Us
Print
Feedback
Export to File
Search:
This record has one attached file:
Add More Files
Attach File(s):
Display Name for File*:
Save
Citation
Tags
HERO ID
8590616
Reference Type
Journal Article
Title
Recent Advances in Optoelectronic Devices Based on 2D Materials and Their Heterostructures
Author(s)
Cheng, J; Wang, C; Zou, X; Liao, L
Year
2019
Is Peer Reviewed?
0
Journal
Advanced Optical Materials
ISSN:
2195-1071
Volume
7
Issue
1
Language
English
DOI
10.1002/adom.201800441
Web of Science Id
WOS:000456708300005
Abstract
2D materials, such as graphene, transition metal dichalcogenides, and black phosphorus, have become the most potential semiconductor materials in the field of optoelectronic devices due to their extraordinary properties. Owing to the layer-dependent and appropriately sized bandgaps, photodetectors based on various 2D materials are designed and manufactured rationally. Utilizing the unique properties of 2D materials, many surprising physical phenomena of junctions based on 2D materials can be obtained after different 2D materials are stacked together. This makes heterojunctions more popular than 2D materials themselves, and the design of 2D materials for human beings is easier than ever. In this review, recent progress in optoelectronic applications based on 2D materials and their heterojunctions is summarized and discussed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Keywords
2D materials; heterostructures; photodetectors; synthesis techniques
Home
Learn about HERO
Using HERO
Search HERO
Projects in HERO
Risk Assessment
Transparency & Integrity