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HERO ID
8631674
Reference Type
Journal Article
Title
Study of reactive ion etching of Si and SiO2 for CFxCl4-x gases
Author(s)
Fortuã±O, G
Year
1988
Is Peer Reviewed?
1
Journal
Plasma Chemistry and Plasma Processing
ISSN:
0272-4324
EISSN:
1572-8986
Publisher
Kluwer Academic Publishers-Plenum Publishers
Volume
8
Issue
1
Page Numbers
19-34
Language
English
DOI
10.1007/BF01016928
Abstract
A parametric study of the etching of Si and SiO2 by reactive ion etching (RIE) was carried out to gain a better understanding of the etching mechanisms. The following fluorocarbons (FCs) were used in order to study the effect of the F-to-Cl atom ratio in the parent molecule to the plasma and the etching properties: CF4, CF3Cl, CF2Cl2, and CFCl3 (FC-14, FC-13, FC-12, and FC-11 respectively). The Si etch rate uniformity across the wafer as a function of the temperature of the wafer and the Si load, the optical emission as a function of the temperature of the load, the etch rate of SiO2 as a function of the sheath voltage, and the mass spectra for each of the FCs were measured. The temperature of the wafer and that of the surrounding Si load strongly influence the etch rate of Si, the uniformity of etching, and the optical emission of F, Cl, and CF2. The activation energy for the etching reaction of Si during CF4 RIE was measured. The etch rate of Si depends more strongly on the gas composition than on the sheath voltage; it seems to be dominated by ion-assisted chemical etching. The etching of photoresist shifted from chemical etching to ion-assisted chemical etching as a function of the F-to-Cl ratio and the sheath voltage. The etch rate of SiO2 depended more strongly on the sheath voltage than on the F-to-Cl ratio. © 1988 Plenum Publishing Corporation.
Keywords
activation energy; CF4, CF3Cl, CF2Cl2, CFCl3; fluorocarbon-11,-12-13, and-14; ion-assisted chemical etching; loading effect; optical emission; plasma etching; Reactive ion etching; sheath voltage
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