Reaction of gallium arsenide with concentrated acids: formation of arsine
Scott, N; Carter, DE; Fernando, Q
| HERO ID | 1032533 |
|---|---|
| In Press | No |
| Year | 1989 |
| Title | Reaction of gallium arsenide with concentrated acids: formation of arsine |
| Authors | Scott, N; Carter, DE; Fernando, Q |
| Journal | American Industrial Hygiene Association Journal |
| Volume | 50 |
| Issue | 7 |
| Page Numbers | 379-381 |
| Abstract | Crystalline particles of gallium arsenide (GaAs) (approximately 2 microns in diameter) react with concentrated hydrochloric acid (HCl) (11.6 to 9 M) to form highly toxic arsine (AsH3) gas. None of the other strong acids that were investigated reacted with gallium arsenide to form AsH3. A spectrophotometric method, based on the reaction of AsH3 with silver diethyldithiocarbamate in a chloroform solution containing morpholine, was used to detect AsH3 gas dissolved in aqueous solutions and to determine the AsH3 gas that was liberated by the reaction of GaAs with HCl. Active sites on the gallium arsenide surface initiate the reaction that forms AsH3 gas. Absorption of oxygen or ions from solution on these active sites inhibits the formation of AsH3. |
| Doi | 10.1080/15298668991374831 |
| Pmid | 2756869 |
| Wosid | WOS:A1989AE48700008 |
| Is Certified Translation | No |
| Dupe Override | No |
| Comments | |WOS:A1989AE48700008 |
| Is Public | Yes |
| Language Text | English |
| Keyword | <?xml version="1.0" encoding="UTF-8"?><kw>DCN-184640</kw>; <?xml version="1.0" encoding="UTF-8"?><kw>Analytical methods</kw>; <?xml version="1.0" encoding="UTF-8"?><kw>Chemical analysis</kw>; <?xml version="1.0" encoding="UTF-8"?><kw>Analytical chemistry</kw>; <?xml version="1.0" encoding="UTF-8"?><kw>Semiconductors</kw>; <?xml version="1.0" encoding="UTF-8"?><kw>Electronics industry</kw>; <?xml version="1.0" encoding="UTF-8"?><kw>Toxic gases</kw>; <?xml version="1.0" encoding="UTF-8"?><kw>Gas detectors</kw>; <?xml version="1.0" encoding="UTF-8"?><kw>Gas sampling</kw> |
| Is Qa | No |