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1327111 
Journal Article 
Possible Health Hazards Associated with the Use of Toxic Metals in Semiconductor Industries 
Flora, SJS 
2000 
Yes 
Journal of Occupational Health
ISSN: 1341-9145
EISSN: 1348-9585 
42 
3 
105-110 
WOS:000087535500001 
Gallium Arsenide (GaAs), Indium Arsenide (InAs) and Indium
Phosphide (InP) are the intermetallic compounds that are recognised as a potential health risk to
workers occupationally exposed to their dust. Exposure to these semiconductor compounds in the
microelectronic industry can occur during the preparation of material, cleaning and maintenance
operations for quartz glassware and during cleaning of the reactor. The toxic effect of the
intermetallic semiconductors appears to occur due to inhalation or oral exposure and may result
in poisoning. Assessment of risk to workers engaged in GaAs/InAs production is difficult due to
the lack of data on the toxicity of these compounds. Their toxicity is mainly estimated on the
basis of inorganic arsenic because it is now well known that GaAs and InAs dissociate into their
constitute moieties and exert adverse effects on the haematopoietic and immune systems. As their
toxicity is still not very well understood the treatment also remains to be elucidated. 
gallium arsenide; indium arsenide; indium phosphide; metal distribution; biochemical changes; experimental evidence; chelation treatment