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1349051 
Journal Article 
Doping of silicon with arsenic and phosphorus from spin-on sources exposed to incoherent light 
Larsen, AN; Borisenko, VE; Nielsen, LD 
1983 
Journal de Physique. Colloque
ISSN: 0449-1947 
44 
nC5 
427-431 
English 
WOS:A1983RX57300062 
Short-duration incoherent xenon light exposure has been used to dope silicon single crystals with arsenic or phosphorus from spin-on deposited doped silicon oxide films. Induced temperatures between 1000°C and 1200°C have been applied for exposure times between 10 sec and 30 sec. The diffused layers were characterized by sheet resistivity measurements and Rutherford Backscattering including channeling. Furthermore, solar cells made from these samples were evaluated by spectral response measurements and recording of AM1 current-voltage characteristics. Optimal doping conditions are discussed for arsenic and phosphorus in <100> and <111> oriented silicon single crystals with respect to deposited film thickness, exposure time, and induced temperature.