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2991569 
Journal Article 
High-Performance Monolayer WS2 Field-Effect Transistors on High-κ Dielectrics 
Cui, Y; Xin, R; Yu, Z; Pan, Y; Ong, ZY; Wei, X; Wang, J; Nan, H; Ni, Z; Wu, Y; Chen, T; Shi, Y; Wang, B; Zhang, G; Zhang, YW; Wang, X 
2015 
Yes 
Advanced Materials
ISSN: 0935-9648
EISSN: 1521-4095 
27 
35 
5230-5234 
English 
26255894 
WOS:000361205700018 
The combination of high-quality Al2 O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm(2) V(-1) s(-1) (337 cm(2) V(-1) s(-1) ) is reached at room temperature (low temperature) for monolayer WS2 . A theoretical model for electron transport is also developed. 
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