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4245671 
Journal Article 
Excellent insulating behavior Al2O3 thin films grown by atomic layer deposition efficiently at room temperature 
Shen, Y; Li, Y; Zhang, J; Zhu, Xia; Hu, Z; Chu, J 
2012 
1 
Optoelectronics and Advanced Materials Rapid Communications
ISSN: 1842-6573 
6 
5-6 
618-622 
WOS:000306577000022 
Al2O3 thin films were deposited at room temperature by atomic layer deposition (ALD) method with trimethylaluminum and ozone. The deposition velocity can be improved two orders of magnitude with the using of O-3 instead of H2O. The Al2O3 films surface are atomically smooth. It was found that there are much less defects density in the O-3-based Al2O3 film than H2O-based one. The O-3-based Al2O3 film shows excellent insulating behavior and the breakdown field is about 7 MV/cm. These results prove the superior quality of the O-3-based film, which is suitable for microelectronic devices. 
Al2O3 thin films; Atomic layer deposition; Insulating behavior; Breakdown field