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4249962 
Journal Article 
Thin Films of Cobalt Oxide Deposited on High Aspect Ratio Supports by Atomic Layer Deposition 
Diskus, M; Nilsen, Ola; Fjellvag, H 
2011 
Yes 
Chemical Vapor Deposition
ISSN: 0948-1907 
17 
4-6 
135-140 
WOS:000292196600011 
Thin films of cobalt oxide are obtained by atomic layer deposition (ALD) using cobaltocene (CoCp(2)) and ozone as precursors. A window for ALD growth exists in the temperature range 137 to 331 degrees C. Self-limiting growth is verified at a deposition temperature of 167 degrees C. X-ray diffraction (XRD) analysis indicates that the films consist of polycrystalline Co(3)O(4) up to a deposition temperature of some 285 degrees C with CoO being identified as a secondary phase at 331 degrees C. Atomic force microscopy (AFM) proves increased roughness and grain size with increasing deposition temperature, apart from films deposited at 235 degrees C where the roughness is very low due to a change in preferred orientation of the growth. Scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) mapping measurements on coated anodiscs show a homogeneous deposition of cobalt oxide on the 5 mu m upper part of the pores structure. The content of cobalt decreases inside the pores, however, still proving the existence of cobalt inside all pores. 
Alumina membrane; ALD; Cobalt oxide; Conformal coating; Pore coverage profile