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4251218 
Journal Article 
Iridium metal and iridium oxide thin films grown by atomic layer deposition at low temperatures 
Hamalainen, J; Hatanpaa, T; Puukilainen, Esa; Sajavaara, T; Ritala, M; Leskela, M 
2011 
Yes 
Journal of Materials Chemistry
ISSN: 0959-9428
EISSN: 1364-5501 
21 
41 
16488-16493 
WOS:000295733300028 
Atomic layer deposition (ALD) of both iridium and iridium oxide films at low temperatures has been studied and the resulting films have been examined by XRD, FESEM, XRR, EDX, AFM, TOF-ERDA, and four point probe measurements. Iridium oxide films were successfully grown using (MeCp) Ir(CHD) and ozone between 100 and 180 degrees C, however, the density of the films substantially reduced at 120 degrees C and below. The density reduction was accompanied by a phase change from crystalline to amorphous IrO2. Metallic iridium films were deposited between 120 and 180 degrees C by adding a reductive hydrogen pulse after the oxidative ozone pulse. Comparison of these processes with the earlier process employing the same Ir precursor with molecular oxygen is also made. The (MeCp) Ir(CHD)-O-3-H-2 process is able to produce metallic films at about 100 degrees C lower temperature than the oxygen based process.