Health & Environmental Research Online (HERO)


Print Feedback Export to File
4957825 
Journal Article 
THE DEPENDENCE OF ETCH RATE OF PHOTO-CVD SILICON-NITRIDE FILMS ON NH4F CONTENT IN BUFFERED HF 
Rathi, VK; Gupta, M; Agnihotri, OP 
1995 
1 
Microelectronics Journal
ISSN: 0959-8324 
ELSEVIER ADVANCED TECHNOLOGY 
OXFORD 
26 
6 
563-567 
WOS:A1995RX67500006 
The influence was studied of the concentration of ammonium fluoride (NH4F) on the etch rates of silicon nitride films deposited by the mercury-sensitized photochemical vapour deposition method. The composition of the buffered HF was varied between 0 and 40 weight percent (wt%) NH4F with 2 to 12 wt% hydrofluoric acid (HF). The etch rates as a function of buffered HF composition were measured for films deposited under various process parameters, viz. reactant gas ratio, substrate temperature and chamber pressure. The results of etch rates as a function of process parameters were correlated to variations in material density and silicon content (Si/N ratio) in the films. 
• Methylmercury
     ADME Search: Jan 1990 - Nov 2018
          Results with mercury
               WoS