US EPA

4968376 

Journal Article 

Gallium Nitride Nanowire Enhanced High Intensity Discharge Luminance System 

Tsai, JTH; Liao, ZiJie 

2009 

648-651 

WOS:000273296000170 

We demonstrated a high intensity discharge lighting system which contains gallium nitride nanowires on the electrodes to enhance the power efficiency of the system. Gallium nitride thin films have been used in blue light-emitting diode (LED). However, when this material was fabricated in a nanowire structure, the high aspect ration of the geometric outlook makes it become an idea plasma ignition enhancer. Carbon nanotube has been used in plasma based lighting system for reduction of the power consumptions. We use GaN nanowire as the enhancer on the electrodes of the HID system which gives a better ignition voltage but also eliminate the usages of mercury in the conventional HID system. Due to the high temperature occurs when plasma ignited, the partial GaN dissociated to release Ga ions into the lamp. Ga ion has large capture cross-section of electron which helps the lamp electrodes maintain a high electric resistance. This could enhance the power efficiency and also prevent the sputtering effect on the cathode and enhance the lighting system's life-time. This approach also makes such HID system more environmental friendly. Hence, it is possible to produce a mercury-free plasma light lamp. 

gallium nitride; high intensity discharge lamp; nanowire