Terahertz and Metal-insulator Transition Properties of VO2 Film Grown on Sapphire Substrate with MBE | Health & Environmental Research Online (HERO)

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HERO ID

5061240

Reference Type

Journal Article

Title

Terahertz and Metal-insulator Transition Properties of VO2 Film Grown on Sapphire Substrate with MBE

Author(s)

Sun Hong-Jun; Wang Min-Huan; Bian Ji-Ming; Miao Li-Hua; Zhang Yu-Zhi; Luo Ying-Min

Year

2017

Is Peer Reviewed?

Journal

Wuji Cailiao Xuebao
ISSN: 1000-324X

Volume

Issue

Page Numbers

437-442

DOI

10.15541/jim20160456

Web of Science Id

WOS:000400225900016

Keywords

vanadium dioxide film; terahertz time-domain spectroscopy (THz-TDs); molecular beam epitaxy (MBE); metal-insulator transition