US EPA

738286 

Journal Article 

Scalable complementary logic gates with chemically doped semiconducting carbon nanotube transistors 

Lee, SY; Lee, SW; Kim, SM; Yu, WJ; Jo, YW; Lee, YH 

2011 

1 

ACS Nano
ISSN: 1936-0851
EISSN: 1936-086X 

5 

3 

2369-2375 

English 

21370895 

10.1021/nn200270e 

Use of random network carbon nanotube (CNT) transistors and their applications to complementary logic gates have been limited by several factors such as control of CNT density, existence of metallic CNTs producing a poor yield of devices, absence of stable n-dopant and control of precise position of the dopant, and absence of a scalable and cost-effective fabrication process. Here, we report a scalable and cost-effective fabrication of complementary logic gates by precisely positioning an air-stable n-type dopant, viologen, by inkjet printing on a separated semiconducting CNTs network. The obtained CNT transistors showed a high yield of nearly 100% with an on/off ratio of greater than 10(3) in an optimized channel length (∼9 μm). The n-doped semiconducting carbon nanotube transistors showed a nearly symmetric behavior in the on/off current and threshold voltage with p-type transistors. CMOS inverter, NAND, and NOR logic gates were integrated on a HfO2/Si substrate using the n/p transistor arrays. The gain of inverter is extraordinarily high, which is around 45, and NAND and NOR logic gates revealed excellent output on and off voltages. These series of whole processes were conducted under ambient conditions, which can be used for large-area and flexible thin film technology.