US EPA

7768204 

Journal Article 

Ferromagnetic Order at Room Temperature in Monolayer WSe2 Semiconductor via Vanadium Dopant 

Yun, SJ; Duong, DL; Ha, DM; Singh, K; Phan, TL; Choi, W; Kim, YM; Lee, YH 

2020 

Advanced science
ISSN: 2198-3844 

7 

9 

1903076 

English 

32382479 

10.1002/advs.201903076 

WOS:000532242800012 

Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition are reported. Ferromagnetic order is manifested using magnetic force microscopy up to 360 K, while retaining high on/off current ratio of ≈105 at 0.1% V-doping concentration. The V-substitution to W sites keeps a V-V separation distance of 5 nm without V-V aggregation, scrutinized by high-resolution scanning transmission electron microscopy. More importantly, the ferromagnetic order is clearly modulated by applying a back-gate bias. The findings open new opportunities for using 2D transition metal dichalcogenides for future spintronics.