US EPA

1001052 

Journal Article 

On the Mechanism of Silicon Activation by Halogen Atoms 

Soria, FA; Patrito, EM; Paredes-Olivera, P 

2011 

1 

Langmuir
ISSN: 0743-7463
EISSN: 1520-5827 

27 

6 

2613-2624 

English 

21338085 

10.1021/la104701g 

Despite the widespread use of chlorinated silicon as the starting point for further functionalization reactions, the high reactivity of this surface toward a simple polar molecule such as ammonia still remains unclear. We therefore undertook a comprehensive investigation of the factors that govern the reactivity of halogenated silicon surfaces. The reaction of NH(3) was investigated comparatively on the Cl-Si(100)-2 × 1, Br-Si(100)-2 × 1, H-Si(100)-2 × 1, and Si(100)-2 × 1 surfaces using density functional theory. The halogenated surfaces show considerable activation with respect to the hydrogenated surface. The reaction on the halogenated surfaces proceeds via the formation of a stable datively bonded complex in which a silicon atom is pentacoordinated. The activation of the halogenated Si(100)-2 × 1 surfaces toward ammonia arises from the large redistribution of charge in the transition state that precedes the breakage of the Si-X bond and the formation of the Si-NH(2) bond. This transition state has an ionic nature of the form Si-NH(3)(+)X(-). Steric effects also play an important role in surface reactivity, making brominated surfaces less reactive than chlorinated surfaces. The overall activation-energy barriers on the Cl-Si(100)-2 × 1 and Br-Si(100)-2 × 1 surfaces are 12.3 and 19.9 kcal/mol, respectively, whereas on the hydrogenated Si(100)-2 × 1 surface the energy barrier is 38.3 kcal/mol. The reaction of ammonia on the chlorinated surface is even more activated than on the bare Si(100)-2 × 1 surface, for which the activation barrier is 21.3 kcal/mol. Coadsorption effects in partially aminated surfaces and in the presence of reaction products increase activation-energy barriers and have a blocking effect for further reactions of NH(3).