US EPA

1371491 

Technical Report 

Photo-Assisted Epitaxial Growth for III-V Semiconductors. Selective Area Epitaxy 

Tu, CW; Dong, HK 

1995 

NTIS/02981959_3 

GRA and I 

GRA and I 

We have investigated laser-enhanced growth of GaAs by metal-organic molecular beam epitaxy (MOMBE) with triethylgallium (TEGa) and solid arsenic and by chemical beam epitaxy (CBE) with TEGa and a safer, alternative organometallic precursor, tris dimethylaminoarsenic (TDMAAs), to the highly toxic arsine. We discovered that with TDMAAs we can increase the laser-enhanced growth temperature window by 100 deg C, as compared to that with arsine or arsenic. CBE growth of InP and InGaP using tris- dimethylaminophosphorus (TDMAP) and tertiarybutylphosphine (TBP) is also reported. We discovered the etching effect of TDMAAs and TDMAP, and investigated laser-enhanced etching of GaAs by TDMAAs. We also investigated laser-enhanced carbon and silicon doping in GaAs with diiodomethane (CI2H2) and disilane, respectively. We can achieve a two-order-of-magnitude enhancement in p-type carbon doping with CI2H2 by laser irradiation. Finally, we report on lateral bandgap variation by laser-modified compositional change in InGaAs/GaAs multiple quantum wells grown by MOMBE and CBE. jg p.3. 

Epitaxial growth; *Group III compounds; *Group IV compounds; *Group V compounds; *P type semiconductors; Toxicity; Quantum wells; Gallium arsenides; Organometallic compounds; Semiconductors(Materials); Carbon; Solids; Lasers; Etching; Molecular beams; Silicon; Silanes; Iodine; Doping; Methane; Arsines; Indium phosphides; Arsenic; Export control; TEGA(Triethylgallium); CBE(Chemical beam expitaxy); Chemical beams; TDMAAS(Tris-dimethylaminoarsenic); TDMAP(Tris-dimethy laminophosphorus); TBP(Tertiarybutylphosphine); Diiodomethane; MOMBE(Metalorganic molecular beam epitaxy)