Technical Aspects of InGaAs MOMBE: Shutter Action, System Drift, and Material Quality. (Reannouncement with New Availability Information) | Health & Environmental Research Online (HERO)

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Citation
Tags

HERO ID

1379778

Reference Type

Technical Report

Title

Technical Aspects of InGaAs MOMBE: Shutter Action, System Drift, and Material Quality. (Reannouncement with New Availability Information)

Author(s)

Woelk, E; Sherwin, M; Munns, G; Haddad, G

Year

1991

Report Number

NTIS/03007011_a

Volume

GRA and I

Issue

GRA and I

Abstract

Lattice matched In(X)Ga(1-x)As films were deposited on InP substrates using metalorganic molecular beam epitaxy (MOMBE) with trimethylindium (TMIn), triethylgallium (TEGa) and a solid arsenic source. The effect of growth temperature and molecular beam composition on growth rate and crystal composition was investigated. A long term drift of the molecular beam composition and an increasing difference between temperature readings of the thermocouple and the pyrometer were observed. The corrected data show a linear dependence of crystal composition on molecular beam composition. Shutter action on TMIn and TEGa was investigated. The results show the adverse effect of solely using the shutters to control the metalorganic molecular beam, leading to inferior material quality and rough surface morphology.

Keywords

Arsenic; Epitaxial growth; Methyl radicals; Molecular properties; Morphology; Organometallic compounds; Pyrometers; Quality; Substrates; Surface properties; Surface roughness; Temperature; Thermocouples; Reprints; Gallium indium arsenides; Epitaxy; Molecular beam epitaxy; Indium phosphides