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4252893 
Journal Article 
Substrate effects on metal-insulator transition characteristics of rf-sputtered epitaxial VO2 thin films 
Cui, Y; Ramanathan, S 
2011 
1 
Journal of Vacuum Science and Technology A
ISSN: 0734-2101
EISSN: 1520-8559 
29 
4 
WOS:000292639500010 
We report on synthesis and phase transition characteristics of VO2 films grown on various single crystal substrates Al2O3 (0001), TiO2 (101), TiO2 (001), and MgF2 (001). An epitaxial orientation relationship was established for films on Al2O3 and TiO2 from x-ray 2 theta-omega coupled scans and phi scans. Films grown on these substrates exhibit a metal to insulator transition below that for bulk single crystals with accompanying resistance change of 3 to 4 orders of magnitude. Trends in phase transition characteristics with substrate physical properties are analyzed. Postdeposition treatment studies in oxygen and ozone at low temperatures demonstrate that epitaxial VO2 films on TiO2 can tolerate oxidation environment better than the films on Al2O3. The studies could be of relevance toward further advancing structure-functional property relations in this important material system. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3584817]